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PHP24N03LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP24N03LTissupp

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHP24N03LT

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology. Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP24N03LTissupp

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

TrenchMOStransistorLogiclevelFET

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability:PHD24N03LTinSOT428(D-PAK). Features ■TrenchMOS™technology ■Lowon-stateresistance ■Avalancheruggednessrated ■Logiclevelcompati

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

TrenchMOStransistorLogiclevelFET

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability:PHD24N03LTinSOT428(D-PAK). Features ■TrenchMOS™technology ■Lowon-stateresistance ■Avalancheruggednessrated ■Logiclevelcompati

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

更新时间:2025-6-7 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHI
24+
NA/
4250
原厂直销,现货供应,账期支持!
MINI
23+
N/A
10000
原装现货 假一赔十
PHI
17+
TO-220
6200
Mini-Circuits
2023+
A01
120
专业销售MINI电子元件,常年备有大量库存
MINI
24+
8
MINI
三年内
1983
只做原装正品
Mini-Circuits
638
原装正品
N
22+
TO220AB
25000
只做原装进口现货,专注配单
MINI
24+
SMD
1680
MINI专营品牌进口原装现货假一赔十
mini-circuits
2017+
SMD
1585
只做原装正品假一赔十!

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