PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

PowerMOS transistor

N-Channel Enhancement Mode Power MOSFET

Description The 18N20 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

DC-DC & DC-AC Converters for telecom,

Application · DC-DC & DC-AC Converters for telecom, industrial and consumer environment · Uninterruptible Power Supply (UPS) · Switch Mode Low Power Supplies · Industrial Actuators

N-Channel Enhancement Mode Power MOSFET

Description The 18N20A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

isc N-Channel MOSFET Transistor

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18A竊?00V N-CHANNEL MOSFET

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