型号 功能描述 生产厂家 企业 LOGO 操作
PHP160NQ08T

N-channel TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Standard level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptable power supplies ■ DC-to-DC converters ■ Ge

Philips

飞利浦

PHP160NQ08T

N-channel TrenchMOS standard level FET

ETC

知名厂家

PHP160NQ08T

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

PHP160NQ08T

N-channel TrenchMOS standard level FET

ETC

知名厂家

N-channel TrenchMOS standard level FET

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology. Features ■ Standard level threshold ■ Very low on-state resistance. Applications ■ Motors, lamps, solenoids ■ Uninterruptable power supplies ■ DC-to-DC converters ■ Ge

Philips

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.6mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

N-channel TrenchMOS standard level FET

ETC

知名厂家

PHP160NQ08T产品属性

  • 类型

    描述

  • 型号

    PHP160NQ08T

  • 功能描述

    MOSFET TRENCH-75

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-1 22:59:00
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ADI
23+
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7000
恩XP
1923+
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6896
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PHL
20+
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原装优势主营型号-可开原型号增税票
恩XP
2022+
TO220AB
12888
原厂代理 终端免费提供样品

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