isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 21mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-channel enhancement mode field-effect transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP45N03LTA in SOT78 (TO-220AB) PHB45N03LTA in SOT404 (D2-PAK) PHD45N03LTA in SOT428 (D-PAK). Features ■ Low on-state resistance ■ Fast swit

N-channel enhancement mode field-effect transistor

N-Channel 30-V (D-S) MOSFET

文件：1.01549 Mbytes Page：8 Pages

N-Channel Logic Level PWM Optimized Power MOSFET

General Description This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. F

N-Channel 30-V (D-S) MOSFET

文件：1.01523 Mbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.01519 Mbytes Page：8 Pages

30V LOGIC N-Channel MOSFET

文件：668.76 Kbytes Page：9 Pages

30V LOGIC N-Channel MOSFET

文件：668.76 Kbytes Page：9 Pages