位置：首页 > IC中文资料 > PHD2N60EMOS
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  |   | |
N2Amps竊?00VoltsN-ChannelMOSFET Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge | ESTEKEstek Electronics Co. Ltd 伊泰克电子北京伊泰克电子有限公司 |  | | |
2Amps,600/650VoltsN-CHANNELPOWERMOSFET TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | | | |
600VN-ChannelPowerMOSFET Features ●RDS(ON) | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 |  | | |
2A600VN-channelEnhancementModePowerMOSFET 文件：1.34834 Mbytes Page：13 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
TO-3 |
8160 |
原厂原装 |
|||
ON(安森美) |
2021/2022+ |
标准封装 |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
UTC |
21+ |
TO252 |
1625 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
UTC |
23+/24+ |
TO92 |
15000 |
原装进口、正品保障、合作持久 |
|||
LITTELFUSE/力特 |
2407+ |
30098 |
全新原装!仓库现货,大胆开价! |
||||
ST |
TO-3 |
6688 |
15 |
现货库存 |
|||
ON/安森美 |
24+ |
TO-220(TO-220-3) |
10000 |
十年沉淀唯有原装 |
|||
INFINEO |
24+ |
SOT223 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
LITTELFUSE |
/ROHS.original |
原封 |
10000 |
电子元件,供应 -正纳电子/ 元器件IC -MOS -MCU. |
|||
蓝箭 |
25+ |
TO252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
PHD2N60EMOS芯片相关品牌
PHD2N60EMOS规格书下载地址
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