型号 功能描述 生产厂家&企业 LOGO 操作
PHD2N60E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP2N60Eissupplied

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHD2N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
PHD2N60E

N-Channel650V(D-S)MOSFET

文件:1.08597 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

2Amps,600VoltsN-CHANNELMOSFET

DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

N2Amps竊?00VoltsN-ChannelMOSFET

Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge

ESTEKEstek Electronics Co. Ltd

伊泰克电子北京伊泰克电子有限公司

ESTEK

2Amps,600/650VoltsN-CHANNELPOWERMOSFET

TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

600VN-ChannelPowerMOSFET

Features ●RDS(ON)

DYELECDIYI Electronic Technology Co., Ltd.

迪一电子山东迪一电子科技有限公司

DYELEC

2A600VN-channelEnhancementModePowerMOSFET

文件:1.34834 Mbytes Page:13 Pages

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

东海半导体江苏东海半导体股份有限公司

WXDH

PHD2N60E产品属性

  • 类型

    描述

  • 型号

    PHD2N60E

  • 制造商

    NXP Semiconductors

  • 功能描述

    MOSFET N D-PAK

更新时间:2025-7-25 10:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
2023+
SOT-252
50000
原装现货
PHI
05+
原厂原装
50051
只做全新原装真实现货供应
恩XP
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
24+
3000
公司存货
PHI
25+
TO-252
4500
全新原装、诚信经营、公司现货销售!
PHI
24+
TO-252
22055
郑重承诺只做原装进口现货
PHI
1709+
TO-252/D-
32500
普通
24+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
PHI
17+
TO-252
31518
原装正品 可含税交易
PHI
23+
TO-252
50000
全新原装正品现货,支持订货

PHD2N60E芯片相关品牌

  • ABRACON
  • AD
  • BARRY
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  • HMSEMI
  • Motorola
  • NIC
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  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

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