| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PHD2N50E | PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N50E is supplied | PHILIPS 飞利浦 | ||
PHD2N50E | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | ||
PHD2N50E | Power MOSFET 文件:1.07611 Mbytes Page:9 Pages | VBSEMI 微碧半导体 | ||
PHD2N50E | PowerMOS transistors Avalanche energy rated | ETC 知名厂家 | ETC | |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi | MOTOROLA 摩托罗拉 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N50E is supplied | PHILIPS 飞利浦 | |||
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power | PHILIPS 飞利浦 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX2N50E is supplied | PHILIPS 飞利浦 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
TO-252 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
PHI |
22+ |
TO252 |
3000 |
原装正品,支持实单 |
|||
PHI |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
24+ |
QFP |
68 |
真实现货库存 |
||||
PHI |
22+ |
TO252 |
20000 |
公司只做原装 品质保障 |
|||
恩XP |
23+ |
TO-252 |
7566 |
原厂原装 |
|||
AMPHENOL/安费诺 |
2450+ |
DIP6 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
恩XP |
20+ |
TO-252 |
63258 |
原装优势主营型号-可开原型号增税票 |
|||
恩XP |
21+ |
TO252 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
PHD2N50E芯片相关品牌
PHD2N50E规格书下载地址
PHD2N50E参数引脚图相关
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DdatasheetPDF页码索引
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