Complementary enhancement mode MOS transistors

DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectificatio

Complementary intermediate level FET

1.1 General description Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic

PHC21025 - Complementary intermediate level FET

Complementary intermediate level FET - Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industri ·Low conduction losses due to low on-state resistance\n·Suitable for high frequency applications due to fast switching characteristics;

N- and P-Channel 30 V (D-S) MOSFET

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Complementary intermediate level FET

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NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Self-aligned process entirel

4-wire Resistive Touch Screen Controller

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Complementary enhancement mode MOS transistors

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