Complementary enhancement mode MOS transistors

DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. APPLICATIONS • Motor and actuator driver • Power management • Synchronized rectificatio

Complementary intermediate level FET

1.1 General description Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic

PHC21025 - Complementary intermediate level FET

N- and P-Channel 30 V (D-S) MOSFET

文件：1.23118 Mbytes Page：14 Pages

Complementary intermediate level FET

文件：249.14 Kbytes Page：16 Pages

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Self-aligned process entirel

4-wire Resistive Touch Screen Controller

文件：741.54 Kbytes Page：19 Pages

Complementary enhancement mode MOS transistors

文件：57.65 Kbytes Page：2 Pages