Complementary enhancement mode MOS transistors

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NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR • Self-aligned process entirel

Complementary intermediate level FET

1.1 General description Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applic

4-wire Resistive Touch Screen Controller

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N- and P-Channel 30 V (D-S) MOSFET

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