1.1 General description

Intermediate level N-channel and P-channel complementary pair enhancement mode

Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This

product is designed and qualified for use in computing, communications, consumer and

industrial applications only.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Suitable for high frequency

applications due to fast switching

characteristics

1.3 Applications

Motor and actuator drivers

Power management

Synchronized rectification