TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

TrenchMOS transistor Standard level FET

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

N-Channel 60 V (D-S) MOSFET

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Fast Switching Speed

文件：67.88 Kbytes Page：2 Pages

N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：1.40473 Mbytes Page：8 Pages