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N-Channel 650V (D-S) Power MOSFET

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VBSEMI

微碧半导体

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

UTC

友顺

Avalanche Energy Specified

DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements

ISC

无锡固电

N-Channel 600V (D-S) Power MOSFET

文件:1.0803 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL POWER MOSFET

文件:460.3 Kbytes Page:6 Pages

ZSELEC

淄博圣诺

N-Channel Power MOSFET

文件:486.21 Kbytes Page:10 Pages

NELLSEMI

尼尔半导体

更新时间:2025-10-15 11:01:00
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