N-channel enhancement mode field effect transistor

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Logic level compatible. Applications ■ General purpose switching ■ Switched mode power supplies.

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Suit

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 24A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 26mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 60 V (D-S) MOSFET

文件：960.09 Kbytes Page：7 Pages

N-Channel 60 V (D-S) MOSFET

文件：960.1 Kbytes Page：7 Pages

32 Amps, 60 Volts, N?묬hannel DPAK

文件：71.84 Kbytes Page：8 Pages

32 Amps, 60 Volts, N?묬hannel DPAK

文件：71.84 Kbytes Page：8 Pages