isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，60V，32A，28mΩ，单 N 沟道，DPAK，逻辑电平

适用于电源、转换器、功率电机控制和桥式电路中的低压高速开关应用。 • Smaller Package than MTB30N06VL\n• Lower VDS(on)\n• Lower and Tighter VSD\n• Lower Reverse Recovery Stored Charge\n• Pb-Free Packages are Available;

Power MOSFET 32 Amps, 60 Volts

文件：103.98 Kbytes Page：7 Pages

Power MOSFET 32 Amps, 60 Volts

文件：103.98 Kbytes Page：7 Pages

Power MOSFET 32 Amps, 60 Volts, Logic Level(N-Channel DPAK)

文件：66.42 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 60 V (D-S) MOSFET

文件：960.09 Kbytes Page：7 Pages

Power MOSFET 32 Amps, 60 Volts

文件：103.98 Kbytes Page：7 Pages

Power MOSFET 32 Amps, 60 Volts, Logic Level(N-Channel DPAK)

文件：66.42 Kbytes Page：8 Pages

Power MOSFET 32 Amps, 60 Volts

文件：103.98 Kbytes Page：7 Pages

Power MOSFET 32 Amps, 60 Volts

文件：103.98 Kbytes Page：7 Pages

N-Channel 60 V (D-S) MOSFET

文件：961.02 Kbytes Page：7 Pages

Power MOSFET 32 Amps, 60 Volts

文件：103.98 Kbytes Page：7 Pages

Power MOSFET 32 Amps, 60 Volts

文件：103.98 Kbytes Page：7 Pages

Power MOSFET 32 Amps, 60 Volts, Logic Level(N-Channel DPAK)

文件：66.42 Kbytes Page：8 Pages

Power MOSFET 32 Amps, 60 Volts

文件：103.98 Kbytes Page：7 Pages

N-Channel 60-V (D-S) MOSFET

文件：896.96 Kbytes Page：6 Pages

N-channel enhancement mode field effect transistor

Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Features ■ TrenchMOS™ technology ■ Logic level compatible. Applications ■ General purpose switching ■ Switched mode power supplies.

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.045Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIE

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.045Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIE

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.045Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIE