| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PHB2N50 | PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended | PHILIPS 飞利浦 | ||
PHB2N50 | PowerMOS transistor | ETC 知名厂家 | ETC | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N50E is supplied | PHILIPS 飞利浦 | |||
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi | MOTOROLA 摩托罗拉 | |||
PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power | PHILIPS 飞利浦 | |||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX2N50E is supplied | PHILIPS 飞利浦 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
LITTELFUSE |
2450+ |
SOP |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
C&KCOMPONENTS |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
|||
24+ |
3000 |
公司存货 |
|||||
LINEAR/凌特 |
23+ |
SOT23-6 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
PHI |
20+ |
TO-263 |
32500 |
现货很近!原厂很远!只做原装 |
|||
C&K |
42 |
||||||
C&KCOMPONENTS |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
JIDC济德 |
24+ |
连接器 |
5000 |
济德连接器/961-0211-031可替代PHB-2Y |
|||
NIEC |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
PHI |
2022+ |
SOT404(D2PAK) |
5540 |
原厂代理 终端免费提供样品 |
PHB2N50规格书下载地址
PHB2N50参数引脚图相关
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PHB2N50数据表相关新闻
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DdatasheetPDF页码索引
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