PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N50E is supplied

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

2 Amps, 500 Volts N-CHANNEL POWER MOSFET

文件：173.38 Kbytes Page：6 Pages

2A, 500V N-CHANNEL POWER MOSFET

文件：181.74 Kbytes Page：6 Pages

N-CHANNEL JUNCTIN SILICON FET

文件：208.82 Kbytes Page：7 Pages

N-CHANNEL JUNCTIN SILICON FET

文件：208.82 Kbytes Page：7 Pages

N-CHANNEL JUNCTIN SILICON FET

文件：208.82 Kbytes Page：7 Pages