N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. Features ■ Low thermal resistance ■ SO8 equivalent area footprint ■ Low gate drive current ■ Low on-state resistance. Applications ■ DC-to-DC converters

N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

N-channel TrenchMOS standard level FET

PH20100S - N-channel TrenchMOS standard level FET

Capacitive Sensor

Features ■M30 × 1.5 threaded barrel ■Plastic, PA12‐GF30 ■Fine adjustment via potentiometer ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection ■ATEX category II 2 G, Ex Zone 1 ■ATEX category II 1 D, Ex Zone 20 ■SIL 2 (Low Demand Mode) acc. to IEC 61508, PL

PRODUCT SPECIFICATION

Cable/Wire stripperss

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. Features • Package Designed for Power Surface Mount Applications • Center−Tap Configuration

ENGINEERS CUTTING TOOLS

文件：3.25271 Mbytes Page：24 Pages

INDUSTRIAL MICROWAVE GENERATORS 2450 MHZ

文件：240.25 Kbytes Page：4 Pages