Wireless Bipolar Power Transistor 10W, 1.78-1.90 GHz

Features • Designed for cellular base station applications • -30 dBc typ. 3rd IMD at 10 W PEP • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting

Wireless Bipolar Power Transistor, 1 OW 1.78 - 1.90 GHz

Features • Designed for Cellular Base Station Applications • -30 dBc Typ. 3rd IMD at 10 Watt PEP • Common Emitter Configuration • Internal Input Impedance Matching • Diffused Emitter Ballasting

Wireless Bipolar Power Transistor, 15W . 1.78 - 1.90 GHz

Wireless Bipolar Power Transistor, 15W 1.78 - 1.90 GHz Features • NPN Silicon Microwave Power Transistor • Designed for Linear Amplifier Applications • Class AB: -34 dBc Typ 3rd IMD at 15Watts PEP • Class A:+48 dBm Typ 3rd Order lnrercept Point . • Common Emitter Configuration • Internal In

Wireless Bipolar Power Transistor 15W, 1.78-1.90 GHz

Features • NPN silicon microwave power transistor • Designed for linear amplifier applications • Class AB: -34 dBc typ. 3rd IMD at 15 W PEP • Class A: +48 dBm typ. 3rd order intercept point - • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting •

Wireless Bipolar Power Transistor

Features • Designed for cellular base station applications • Class AB: -34 dBc typ. 3rd IMD at 2 W PEP • Class A: +43 dBm typ. 3rd order intercept point • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting

Wireless Bipolar Power Transistor, 2W 1.78 - 1.90 GHz

Features • Designed for Cellular Base Station Applications • Class AB: -34 dBc Typ. 3rd IMD at 2 Watts PEP • Class A: +43 dBm Typ. 3rd Order Intercept Point • Common Emitter Configuration • Internal Input Impedance Matching • Diffused Emitter Ballasting

Wireless Bipolar Power Transistor 33W, 1805-1880 MHz

Features • NPN silicon microwave power transistor • Common emitter Class AB operation • Internal input and output impedance matching • Diffused emitter ballasting • Gold metallization system • RoHS Compliant

WIRELESS POWER TRANSISTOR 33W

Features • NPN Silicon Microwave Power Transistor • Common Emitter Class AI3Operation • Internal Input and Output Impedance Matching • Diffksed Emitter Ballasting • Gold Metallization System

Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz

Description M/A-COM’s PH11819-45A is a high efficiency silicon bipolar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1805 to 1880 MHz range. This transistor features internal input and output impedance matching, diffused emitter ballast

Wireless Bipolar Power Transistor 45W, 1805-1880 MHz

Features • NPN silicon microwave power transistor • Common emitter Class AB operation • Internal input and output impedance matching • Diffused emitter ballasting • Gold metallization system

Wireless Bipolar Power Transistor

Features • NPN silicon microwave power transistor • Designed for linear amplifier applications • Class AB: -34 dBc typ. 3rd IMD at 4 W PEP • Class A: +44 dBm typ. 3rd order intercept point - • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting •

Wireless Bipolar Power Transistor, 4W 1.78 - 1.90 GHz

Features • NPN Silicon Microwave Power Transistor • Designed for Linear Amplifier Applications • Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP • Class A: +44 dBm Typ 3rd Order Intercept Point . • Common Emitter Configuration • Internal Input Impedance Matching • Diffused Emitter Ballasting

Wireless Power Transistor 90 Watts, 1805-1880 MHz

Description M/A-COMs PH1819-90 is a high power transistor designed for use in wireless communications systems. The PH1819-90 is capable of operating at an output power of 90W CW, and is currently being used in both TDMA applications in th 1.8 GHz to 2.0 GHz frequency range. Features • NPN Silic

Wireless Bipolar Power Transistor 15W, 1.78-1.90 GHz

Wireless Bipolar Power Transistor

Wireless Bipolar Power Transistor 33W, 1805-1880 MHz

Wireless Power Transistor 45 Watts, 1805 - 1880 MHz

文件：104.53 Kbytes Page：2 Pages

FEMALE THREADED STANDOFFS

[KEYSTONE] THREADED STANDOFFS

FEMALE THREADED STANDOFFS

[KEYSTONE] THREADED STANDOFFS

Audio Snake Cable, 16 Pr #22 Str TC, Ind. Shielded & Jacketed, O/A Foil,PVC Jkt, CMR

Product Description Audio Snake Cable, 16 Pair 22 AWG (7 x 30) Tinned Copper, PP Insulation, Individually Foil Shielded and PVC Jacketed, Overall Beldfoil® Shield, PVC Jacket, Ripcord, CMR

AC??7 SoundPort Codec

PRODUCT OVERVIEW The AD1819B SoundPort Codec is designed to meet all requirements of the Audio Codec ’97, Component Specification, Revision 1.03, © 1996, Intel Corporation, found at www.Intel.com. In addition, the AD1819B supports multiple codec configurations (up to three per AC-Link), a DSP s

RDD Lockit™ Strain Relief Bushings – Right Angle

文件：173.41 Kbytes Page：1 Pages