型号 功能描述 生产厂家 企业 LOGO 操作

Wireless Bipolar Power Transistor 10W, 1.78-1.90 GHz

Features • Designed for cellular base station applications • -30 dBc typ. 3rd IMD at 10 W PEP • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting

MA-COM

Wireless Bipolar Power Transistor, 1 OW 1.78 - 1.90 GHz

Features • Designed for Cellular Base Station Applications • -30 dBc Typ. 3rd IMD at 10 Watt PEP • Common Emitter Configuration • Internal Input Impedance Matching • Diffused Emitter Ballasting

MACOM

Wireless Bipolar Power Transistor, 15W . 1.78 - 1.90 GHz

Wireless Bipolar Power Transistor, 15W 1.78 - 1.90 GHz Features • NPN Silicon Microwave Power Transistor • Designed for Linear Amplifier Applications • Class AB: -34 dBc Typ 3rd IMD at 15Watts PEP • Class A:+48 dBm Typ 3rd Order lnrercept Point . • Common Emitter Configuration • Internal In

MACOM

Wireless Bipolar Power Transistor 15W, 1.78-1.90 GHz

Features • NPN silicon microwave power transistor • Designed for linear amplifier applications • Class AB: -34 dBc typ. 3rd IMD at 15 W PEP • Class A: +48 dBm typ. 3rd order intercept point - • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting •

MA-COM

Wireless Bipolar Power Transistor

Features • Designed for cellular base station applications • Class AB: -34 dBc typ. 3rd IMD at 2 W PEP • Class A: +43 dBm typ. 3rd order intercept point • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting

MA-COM

Wireless Bipolar Power Transistor, 2W 1.78 - 1.90 GHz

Features • Designed for Cellular Base Station Applications • Class AB: -34 dBc Typ. 3rd IMD at 2 Watts PEP • Class A: +43 dBm Typ. 3rd Order Intercept Point • Common Emitter Configuration • Internal Input Impedance Matching • Diffused Emitter Ballasting

MACOM

Wireless Bipolar Power Transistor 33W, 1805-1880 MHz

Features • NPN silicon microwave power transistor • Common emitter Class AB operation • Internal input and output impedance matching • Diffused emitter ballasting • Gold metallization system • RoHS Compliant

MA-COM

WIRELESS POWER TRANSISTOR 33W

Features • NPN Silicon Microwave Power Transistor • Common Emitter Class AI3Operation • Internal Input and Output Impedance Matching • Diffksed Emitter Ballasting • Gold Metallization System

MACOM

Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz

Description M/A-COM’s PH11819-45A is a high efficiency silicon bipolar NPN transistor intended for use as a common emitter class AB stage in power amplifiers that operate in the 1805 to 1880 MHz range. This transistor features internal input and output impedance matching, diffused emitter ballast

MACOM

Wireless Bipolar Power Transistor 45W, 1805-1880 MHz

Features • NPN silicon microwave power transistor • Common emitter Class AB operation • Internal input and output impedance matching • Diffused emitter ballasting • Gold metallization system

MA-COM

Wireless Bipolar Power Transistor

Features • NPN silicon microwave power transistor • Designed for linear amplifier applications • Class AB: -34 dBc typ. 3rd IMD at 4 W PEP • Class A: +44 dBm typ. 3rd order intercept point - • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting •

MA-COM

Wireless Bipolar Power Transistor, 4W 1.78 - 1.90 GHz

Features • NPN Silicon Microwave Power Transistor • Designed for Linear Amplifier Applications • Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP • Class A: +44 dBm Typ 3rd Order Intercept Point . • Common Emitter Configuration • Internal Input Impedance Matching • Diffused Emitter Ballasting

MACOM

Wireless Power Transistor 90 Watts, 1805-1880 MHz

Description M/A-COMs PH1819-90 is a high power transistor designed for use in wireless communications systems. The PH1819-90 is capable of operating at an output power of 90W CW, and is currently being used in both TDMA applications in th 1.8 GHz to 2.0 GHz frequency range. Features • NPN Silic

MACOM

Wireless Bipolar Power Transistor

MACOM

Wireless Bipolar Power Transistor 33W, 1805-1880 MHz

MACOM

Wireless Power Transistor 45 Watts, 1805 - 1880 MHz

文件:104.53 Kbytes Page:2 Pages

MACOM

Wireless Bipolar Power Transistor

MACOM

FEMALE THREADED STANDOFFS

[KEYSTONE] THREADED STANDOFFS

ETCList of Unclassifed Manufacturers

未分类制造商

FEMALE THREADED STANDOFFS

[KEYSTONE] THREADED STANDOFFS

ETCList of Unclassifed Manufacturers

未分类制造商

RDD Lockit™ Strain Relief Bushings – Right Angle

文件:173.41 Kbytes Page:1 Pages

Heyco

HIGH TEMPERATURE SERIES

文件:275.11 Kbytes Page:1 Pages

ASSUN

STANDARD SERIES

文件:227.87 Kbytes Page:1 Pages

ASSUN

PH1819产品属性

  • 类型

    描述

  • 型号

    PH1819

  • 制造商

    M/A-COM Technology Solutions

  • 功能描述

    TRANS GP BJT NPN 20V 3A 2PIN HERMETIC METAL - Bulk

更新时间:2025-12-27 11:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PHI
05+
4
一级代理,专注军工、汽车、医疗、工业、新能源、电力
PHI
23+
121212
原厂授权一级代理,专业海外优势订货,价格优势、品种
25+
6
公司优势库存 热卖中!
M/A-COM
23+
TO-59
8510
原装正品代理渠道价格优势
M/A-COM
1923+
原厂封装
8600
莱克讯原厂货源每一片都来自原厂原装现货薄利多
MA/COM
2318+
原装正品
4285
十年专业专注 优势渠道商正品保证
JINGDAO/晶导微
23+
KBP
69820
终端可以免费供样,支持BOM配单!
PHI
23+
高频管
220
专营高频管模块,全新原装!
PHI
23+
/
738
全新原装正品现货,支持订货
恩XP
TO-252
22+
6000
十年配单,只做原装

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