Wireless Bipolar Power Transistor

Features • Designed for cellular base station applications • Class AB: -34 dBc typ. 3rd IMD at 2 W PEP • Class A: +43 dBm typ. 3rd order intercept point • Common emitter configuration • Internal input impedance matching • Diffused emitter ballasting

Wireless Bipolar Power Transistor, 2W 1.78 - 1.90 GHz

Features • Designed for Cellular Base Station Applications • Class AB: -34 dBc Typ. 3rd IMD at 2 Watts PEP • Class A: +43 dBm Typ. 3rd Order Intercept Point • Common Emitter Configuration • Internal Input Impedance Matching • Diffused Emitter Ballasting

Wireless Bipolar Power Transistor

18.7-19.7GHz, 2W Internally Matched Power FET

18.7-19.7GHz, 2W Internally Matched Power FET • 18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 25 TYPICAL) • EIB FEATURES HIGH IP3(46dBm TYPICAL) • +33.0/+32.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 6.0/5.0dB TYPICAL G1dB POWER GAIN FOR EIA/EI

18.7-19.7GHz, 2W Internally Matched Power FET

18.7-19.7GHz, 2W Internally Matched Power FET • 18.7-19.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 25 TYPICAL) • EIB FEATURES HIGH IP3(46dBm TYPICAL) • +33.0/+32.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 6.0/5.0dB TYPICAL G1dB POWER GAIN FOR EIA/EI