Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor 30W, 1.2-1.4 GHz, 1ms Pulse, 10 Duty

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Radar Pulsed Power Transistor 30W, 1.2-1.4 GHz, 6ms Pulse, 25 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor 30W, 1.2-1.4 GHz, 6ms Pulse, 25 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz

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