30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz

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封装/外壳：55AW 包装：托盘 描述：RF TRANS NPN 50V 1.4GHZ 55AW 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF/Microwave Si BJT Power Devices & Pallets

300 Watts - 50 Volts, 100us, 10 Radar 1200 1400 MHz

GENERAL DESCRIPTION The 1214-300 is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred fifty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifi

300 Watts - 40 Volts, 150ms, 10 Radar 1200 - 1400 MHz

GENERAL DESCRIPTION The 1214-300M is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred fifty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specif

300 Watts - 40 Volts, 150關s, 10 Radar 1200 - 1400 MHz

GENERAL DESCRIPTION The 1214-300M is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred fifty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specif

RF/Microwave Si BJT Power Devices & Pallets

1. replace APT logo with Microsemi logo2. replace wording diffused Re with NiCr emitter3. remove Iebo spec.

300 Watts - 50 Volts, 330關s, 10 Radar 1200 - 1400 MHz

GENERAL DESCRIPTION The 1214-300V is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at three hundred thirty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is spe

封装/外壳：55ST 包装：散装 描述：RF TRANS NPN 50V 1.4GHZ 55ST 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF/Microwave Si BJT Power Devices & Pallets

Radar Pulsed Power Transistor 30W, 1.2-1.4 GHz, 6ms Pulse, 25 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor 30W, 1.2-1.4 GHz, 6ms Pulse, 25 Duty

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor

Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/cerami

Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10 Duty 1.2 - 1.4 GHz

Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Matrix Geometry • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input Impedance Matching • Hermetic Metal/Ceramic Package