位置：首页 > IC中文资料第4590页 > 1214-30
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1214-30 | 30Watts,28Volts,PulsedRadar1200-1400MHz 文件：342.23 Kbytes Page：3 Pages | GHZTECH GHz Technology |  |   |
1214-30 | 封装/外壳：55AW 包装：托盘 描述：RF TRANS NPN 50V 1.4GHZ 55AW 分立半导体产品 晶体管 - 双极（BJT）- 射频 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | |
300Watts-50Volts,100us,10Radar12001400MHz GENERALDESCRIPTION The1214-300isaninternallymatched,COMMONBASEtransistorcapableofproviding300WattsofpulsedRFoutputpoweratonehundredfiftymicrosecondspulsewidth,tenpercentdutyfactoracrosstheband1200to1400MHz.Thishermeticallysolder-sealedtransistorisspecifi | ADPOW Advanced Power Technology |  | | |
300Watts-40Volts,150關s,10Radar1200-1400MHz GENERALDESCRIPTION The1214-300Misaninternallymatched,COMMONBASEtransistorcapableofproviding300WattsofpulsedRFoutputpoweratonehundredfiftymicrosecondspulsewidth,tenpercentdutyfactoracrosstheband1200to1400MHz.Thishermeticallysolder-sealedtransistorisspecif | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
300Watts-40Volts,150ms,10Radar1200-1400MHz GENERALDESCRIPTION The1214-300Misaninternallymatched,COMMONBASEtransistorcapableofproviding300WattsofpulsedRFoutputpoweratonehundredfiftymicrosecondspulsewidth,tenpercentdutyfactoracrosstheband1200to1400MHz.Thishermeticallysolder-sealedtransistorisspecif | ADPOW Advanced Power Technology | | | |
300Watts-50Volts,330關s,10Radar1200-1400MHz GENERALDESCRIPTION The1214-300Visaninternallymatched,COMMONBASEtransistorcapableofproviding300WattsofpulsedRFoutputpoweratthreehundredthirtymicrosecondspulsewidth,tenpercentdutyfactoracrosstheband1200to1400MHz.Thishermeticallysolder-sealedtransistorisspe | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
封装/外壳：55ST 包装：散装 描述：RF TRANS NPN 50V 1.4GHZ 55ST 分立半导体产品 晶体管 - 双极（BJT）- 射频 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | | | |
RadarPulsedPowerTransistor30W,1.2-1.4GHz,6msPulse,25Duty Features •NPNsiliconmicrowavepowertransistors •Commonbaseconfiguration •BroadbandClassCoperation •Highefficiencyinter-digitizedgeometry •Diffusedemitterballastingresistors •Goldmetallizationsystem •Internalinputandoutputimpedancematching •Hermeticmetal/cerami | MA-COM M/A-COM Technology Solutions, Inc. |  | | |
RadarPulsedPowerTransistor30W,1.2-1.4GHz,6msPulse,25Duty Features •NPNsiliconmicrowavepowertransistors •Commonbaseconfiguration •BroadbandClassCoperation •Highefficiencyinter-digitizedgeometry •Diffusedemitterballastingresistors •Goldmetallizationsystem •Internalinputandoutputimpedancematching •Hermeticmetal/cerami | MACOMTyco Electronics 玛科姆技术方案控股有限公司 |  | | |
RadarPulsedPowerTransistor Features •NPNsiliconmicrowavepowertransistors •Commonbaseconfiguration •BroadbandClassCoperation •Highefficiencyinter-digitizedgeometry •Diffusedemitterballastingresistors •Goldmetallizationsystem •Internalinputandoutputimpedancematching •Hermeticmetal/cerami | MA-COM M/A-COM Technology Solutions, Inc. | | | |
RadarPulsedPowerTransistor30W,1.2-1.4GHz,1msPulse,10Duty 文件：141.61 Kbytes Page：2 Pages | MACOMTyco Electronics 玛科姆技术方案控股有限公司 | | |
1214-30产品属性
- 类型
描述
- 型号
1214-30
- 制造商
Microsemi Corporation
- 功能描述
Trans GP BJT NPN 50V 4A 3-Pin Case 55AW-1
- 制造商
Microsemi Corporation
- 功能描述
LDMOS TRANSISTOR - Bulk
- 制造商
Microsemi Corporation
- 功能描述
RF POWER TRANSISTOR BIPOLAR/HBT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microsemi/美高森美 |
22+ |
NA |
44383 |
原装正品现货 |
|||
TE/泰科 |
2508+ |
/ |
209858 |
一级代理，原装现货 |
|||
MICROSEMICORP |
23+ |
NA |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MICROSEMI/美高森美 |
22+ |
NA |
20000 |
保证原装正品,假一陪十 |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
TE/泰科 |
23+ |
NA/原装 |
82985 |
代理-优势-原装-正品-现货*期货 |
|||
TE Connectivity |
2022+ |
8 |
全新原装 货期两周 |
||||
TE/泰科 |
24+ |
15321 |
原厂现货渠道 |
||||
Microsemi |
24+ |
N/A |
5600 |
正常排单原厂正规渠道保证原装正品 |
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1214-30规格书下载地址
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1214-30数据表相关新闻
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2020-9-2
DdatasheetPDF页码索引
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