Digitally Controlled Programmable-Gain INSTRUMENTATION AMPLIFIER

FEATURES DIGITALLY PROGRAMMABLE GAINS: DECADE MODEL—PGA202 GAINS OF 1, 10, 100, 1000 BINARY MODEL—PGA203 GAINS OF 1, 2, 4, 8 LOW BIAS CURRENT: 50pA max FAST SETTLING: 2ms to 0.01% LOW NON-LINEARITY: 0.012% max HIGH CMRR: 80dB min NEW TRANSCONDUCTANCE CIRCUITRY LOW COST APPLIC

数控（二进制模型增益 1、2、4、8）可编程增益仪表放大器

The PGA202 is a monolithic instrumentation amplifier with digitally controlled gains of 1, 10, 100, and 1000. The PGA203 provides gains of 1, 2, 4, and 8. Both have TTL or CMOS-compatible inputs for easy microprocessor interface. Both have FET inputs and a new transconductance circuitry that keeps t • DIGITALLY PROGRAMMABLE GAINS: \n• Decade model — PGA202 (Gains of 1, 10, 100, 1000)\n• Binary model — PGA203 (Gains of 1, 2, 4, 8)\n \n• LOW BIAS CURRENT: 50pA max\n• FAST SETTLING: 2µs to 0.01%\n• LOW NON-LINEARITY: 0.012% max\n• HIGH CMRR: 80dB min\n• NEW TRANSCONDUCTANCE CIRCUITRY\n• LO;

Digitally Controlled Programmable-Gain INSTRUMENTATION AMPLIFIER

文件：139.22 Kbytes Page：10 Pages

Digitally Controlled Programmable-Gain INSTRUMENTATION AMPLIFIER

文件：139.22 Kbytes Page：10 Pages

INSTRUMENTATION AMPLIFIER

文件：106.21 Kbytes Page：11 Pages

丝印代码：PGA203KP；Digitally Controlled Programmable-Gain INSTRUMENTATION AMPLIFIER

FEATURES DIGITALLY PROGRAMMABLE GAINS: DECADE MODEL—PGA202 GAINS OF 1, 10, 100, 1000 BINARY MODEL—PGA203 GAINS OF 1, 2, 4, 8 LOW BIAS CURRENT: 50pA max FAST SETTLING: 2ms to 0.01% LOW NON-LINEARITY: 0.012% max HIGH CMRR: 80dB min NEW TRANSCONDUCTANCE CIRCUITRY LOW COST APPLIC

丝印代码：PGA203KP；Digitally Controlled Programmable-Gain INSTRUMENTATION AMPLIFIER

FEATURES DIGITALLY PROGRAMMABLE GAINS: DECADE MODEL—PGA202 GAINS OF 1, 10, 100, 1000 BINARY MODEL—PGA203 GAINS OF 1, 2, 4, 8 LOW BIAS CURRENT: 50pA max FAST SETTLING: 2ms to 0.01% LOW NON-LINEARITY: 0.012% max HIGH CMRR: 80dB min NEW TRANSCONDUCTANCE CIRCUITRY LOW COST APPLIC

丝印代码：PGA203KP；Digitally Controlled Programmable-Gain INSTRUMENTATION AMPLIFIER

FEATURES DIGITALLY PROGRAMMABLE GAINS: DECADE MODEL—PGA202 GAINS OF 1, 10, 100, 1000 BINARY MODEL—PGA203 GAINS OF 1, 2, 4, 8 LOW BIAS CURRENT: 50pA max FAST SETTLING: 2ms to 0.01% LOW NON-LINEARITY: 0.012% max HIGH CMRR: 80dB min NEW TRANSCONDUCTANCE CIRCUITRY LOW COST APPLIC

丝印代码：PGA203KP；Digitally Controlled Programmable-Gain INSTRUMENTATION AMPLIFIER

FEATURES DIGITALLY PROGRAMMABLE GAINS: DECADE MODEL—PGA202 GAINS OF 1, 10, 100, 1000 BINARY MODEL—PGA203 GAINS OF 1, 2, 4, 8 LOW BIAS CURRENT: 50pA max FAST SETTLING: 2ms to 0.01% LOW NON-LINEARITY: 0.012% max HIGH CMRR: 80dB min NEW TRANSCONDUCTANCE CIRCUITRY LOW COST APPLIC

Digitally Controlled Programmable-Gain INSTRUMENTATION AMPLIFIER

文件：139.22 Kbytes Page：10 Pages

INSTRUMENTATION AMPLIFIER

文件：106.21 Kbytes Page：11 Pages

INSTRUMENTATION AMPLIFIER

文件：106.21 Kbytes Page：11 Pages

Digitally Controlled Programmable-Gain INSTRUMENTATION AMPLIFIER

文件：139.22 Kbytes Page：10 Pages

Digitally Controlled Programmable-Gain INSTRUMENTATION AMPLIFIER

文件：139.22 Kbytes Page：10 Pages

INSTRUMENTATION AMPLIFIER

文件：106.21 Kbytes Page：11 Pages

INSTRUMENTATION AMPLIFIER

文件：106.21 Kbytes Page：11 Pages

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.