型号 功能描述 生产厂家 企业 LOGO 操作

120 W, RF Power GaN HEMT

Description Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain an

WOLFSPEED

120 W, RF Power GaN HEMT

Description Wolfspeed’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga

WOLFSPEED

120 W, RF Power GaN HEMT

文件:1.21044 Mbytes Page:13 Pages

Cree

科锐

120 W, RF Power GaN HEMT

文件:1.21044 Mbytes Page:13 Pages

Cree

科锐

120 W, RF Power GaN HEMT

文件:1.21044 Mbytes Page:13 Pages

Cree

科锐

更新时间:2025-10-17 18:51:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CREE
24+
VQFN
7850
只做原装正品现货或订货假一赔十!
CREE
三年内
1983
只做原装正品
CREE
19+
SMD
2
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CREE(科锐)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
CREE
638
原装正品
FREESCALE
24+
TO-59
100
价格优势
CREE(科锐)
24+
N/A
37048
原厂可订货,技术支持,直接渠道。可签保供合同
CREE
23+
2539
原厂原装正品
Cree
25+23+
BGA
19488
绝对原装正品全新进口深圳现货
CREE
24+
SMD
500
“芯达集团”专营军工百分之百原装进口

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