UltraCMOS® High-speed FET Driver, 40 MHz

Features • High- and low-side FET drivers • Dead-time control • Fast propagation delay, 9 ns • Tri-state enable mode • Sub-nanosecond rise and fall time • 2A/4A peak source/sink current • Package – flip chip Applications • Class D audio • DC–DCconversions • AC–DC conversions • Wirele

High-speed FET Driver

UltraCMOS® High-speed FET Driver, 40 MHz

Features • High- and low-side FET drivers • Dead-time control • Fast propagation delay, 9 ns • Tri-state enable mode • Sub-nanosecond rise and fall time • 2A/4A peak source/sink current • Package – flip chip Applications • Class D audio • DC–DCconversions • AC–DC conversions • Wirele

UltraCMOS® High-speed FET Driver, 40 MHz

Features • High- and low-side FET drivers • Dead-time control • Fast propagation delay, 9 ns • Tri-state enable mode • Sub-nanosecond rise and fall time • 2A/4A peak source/sink current • Package – flip chip Applications • Class D audio • DC–DCconversions • AC–DC conversions • Wirele

封装/外壳：模具 包装：卷带（TR） 描述：IC GATE DRVR HALF-BRIDGE DIE 集成电路（IC） 栅极驱动器

2K x 8 CMOS RAM

Description The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques that keep the active (operating) power low, which

2K x 8 CMOS RAM

Features • Low Power Standby. . . . . . . . . . . . . . . . . . . 275μW Max • Low Power Operation . . . . . . . . . . . . . .55mW/MHz Max • Fast Access Time . . . . . . . . . . . . . . . . . 120/200ns Max • Industry Standard Pinout • Single Supply . . . . . . . . . . . . . . . . . . . . . . .

Shielded Surface Mount Inductors

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Shielded Surface Mount Inductors

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Low Power Ambient Light-to-Voltage Non-Linear Converter

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