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PDTC143Z价格
参考价格：￥0.2491
型号：PDTC143ZE,115 品牌：NXP 备注：这里有PDTC143Z多少钱，2026年最近7天走势，今日出价，今日竞价，PDTC143Z批发/采购报价，PDTC143Z行情走势销售排行榜，PDTC143Z报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PDTC143Z | NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif | PHILIPS 飞利浦 |   | |
PDTC143Z | NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓 | ETC 知名厂家 | ETC | |
PDTC143Z | NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified | NEXPERIA 安世 | | |
PDTC143Z | 50 V, 100 mA NPN resistor-equipped transistors General description 100 mA NPN Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit | NEXPERIA 安世 | | |
PDTC143Z | NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ | ETC 知名厂家 | ETC | |
NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified | NEXPERIA 安世 | | ||
NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓 | ETC 知名厂家 | ETC | | |
丝印代码：38；NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified | NEXPERIA 安世 | | ||
NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif | PHILIPS 飞利浦 | | ||
NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif | PHILIPS 飞利浦 | | ||
NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓 | ETC 知名厂家 | ETC | | |
NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓 | ETC 知名厂家 | ETC | | |
NPN resistor-equipped transistor DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif | PHILIPS 飞利浦 | | ||
NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif | PHILIPS 飞利浦 | | ||
NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif | PHILIPS 飞利浦 | | ||
NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓 | ETC 知名厂家 | ETC | | |
丝印代码：E3；NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified | NEXPERIA 安世 | | ||
丝印代码：00010110；NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 47 k廓 General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick | NEXPERIA 安世 | | ||
丝印代码：110011；50 V, 100 mA NPN resistor-equipped transistors General description 100 mA NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits ■ 100 mA output current capability ■ Reduced pick and place costs | NEXPERIA 安世 | | ||
丝印代码：110011；50 V, 100 mA NPN resistor-equipped transistors Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduced pick and place costs Low package height of 0.37 mm AEC-Q101 qualified Suitable for Automatic Optical Inspection (AOI) of solder joint | NEXPERIA 安世 | | ||
50 V, 100 mA PNP resistor-equipped transistors Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduced pick and place costs Low package height of 0.37 mm AEC-Q101 qualified Suitable for Automatic Optical Inspection (AOI) of solder joint | NEXPERIA 安世 | | ||
50 V, 100 mA PNP resistor-equipped transistors Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint | NEXPERIA 安世 | | ||
丝印代码：E8；50 V, 100 mA NPN resistor-equipped transistors Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint | NEXPERIA 安世 | | ||
丝印代码：E8；50 V, 100 mA NPN resistor-equipped transistors Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint • Qualified according to AEC-Q | NEXPERIA 安世 | | ||
50 V, 100 mA NPN resistor-equipped transistors General description 100 mA NPN Resistor-Equipped Transistor (RET) family in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit | NEXPERIA 安世 | | ||
丝印代码：8Q；50 V, 100 mA NPN resistor-equipped transistors Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint | NEXPERIA 安世 | | ||
50 V, 100 mA PNP resistor-equipped transistors Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint | NEXPERIA 安世 | | ||
丝印代码：8Q；50 V, 100 mA NPN resistor-equipped transistors Features and benefits • 100 mA output current capability • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Low package height of 0.5 mm • Suitable for Automatic Optical Inspection (AOI) of solder joint • Qualified according to AEC-Q | NEXPERIA 安世 | | ||
NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓 | ETC 知名厂家 | ETC | | |
NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif | PHILIPS 飞利浦 | | ||
NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif | PHILIPS 飞利浦 | | ||
NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓 | ETC 知名厂家 | ETC | | |
NPN resistor-equipped transistor DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif | PHILIPS 飞利浦 | | ||
丝印代码：18；NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified | NEXPERIA 安世 | | ||
丝印代码：18；50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ 1. General description NPN Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZT-Q 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces | NEXPERIA 安世 | | ||
NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif | PHILIPS 飞利浦 | | ||
NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓 | ETC 知名厂家 | ETC | | |
丝印代码：54；NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified | NEXPERIA 安世 | | ||
丝印代码：54；50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ 1. General description NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • 100 mA output current capability • Built-in bias resistors • Simplifies circuit design • Reduces component count • Reduces | NEXPERIA 安世 | | ||
NPN resistor-equipped transistors; R1 = 4.7 k?? R2 = 47 k? 文件：750.41 Kbytes Page：17 Pages | PHILIPS 飞利浦 | | ||
数字三极管 | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：SC-89，SOT-490 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 250MW SC89 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | ETC 知名厂家 | ETC | | |
NPN resistor-equipped transistor | ETC 知名厂家 | ETC | | |
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 250MW SMT3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | ETC 知名厂家 | ETC | | |
NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 47 k廓 文件：720.64 Kbytes Page：11 Pages | PHILIPS 飞利浦 | | ||
Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | PHILIPS 飞利浦 | | ||
Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | PHILIPS 飞利浦 | | ||
CASE 463-01, STYLE 1 SOT-416/SC-90 Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transi | MOTOROLA 摩托罗拉 | | ||
PNP SILICON BIAS RESISTOR TRANSISTOR This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The | ONSEMI 安森美半导体 | | ||
NPN SILICON BIAS RESISTOR TRANSISTOR Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit | ONSEMI 安森美半导体 | | ||
High Voltage Operational Amplifier 文件：228.44 Kbytes Page：12 Pages | NSC 国半 | | ||
High Voltage Operational Amplifier 文件：228.44 Kbytes Page：12 Pages | NSC 国半 | |
PDTC143Z产品属性
- 类型
描述
- 型号
PDTC143Z
- 功能描述
开关晶体管 - 偏压电阻器 NPN W/RES 50V
- RoHS
否
- 制造商
ON Semiconductor
- 晶体管极性
NPN/PNP
- 安装风格
SMD/SMT
- 封装/箱体
直流集电极/Base Gain hfe
- Min
200 mA
- 最大工作频率
集电极—发射极最大电压
- VCEO
50 V
- 集电极连续电流
150 mA
- 功率耗散
200 mW
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Nexperia(安世) |
25+ |
- |
7589 |
全新原装现货,支持排单订货,可含税开票 |
|||
恩XP |
25+ |
SOT-883 |
32000 |
NXP/恩智浦全新特价PDTC143ZM即刻询购立享优惠#长期有货 |
|||
NEXPERIA/安世 |
24+ |
SOT |
30000 |
NEXPERIA/安世一级代理商 原装进口现货 |
|||
NEXPERIA/安世 |
21+ |
SOT23 |
8080 |
只做原装,质量保证 |
|||
NEXPERIA |
23+ |
SOT-323 |
49800 |
原装正品，实单请联系 |
|||
Nexperia/安世 |
24+ |
SOT-323 |
20000 |
原装正品支持实单 |
|||
PRISEMI |
24+ |
SOT-883 |
50945 |
只做全新原装进口现货 |
|||
NEXPERIA |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
恩XP |
2021+ |
SOT323 |
9000 |
原装现货,随时欢迎询价 |
|||
恩XP |
16+/17+ |
SOT416 |
3500 |
原装正品现货供应56 |
PDTC143Z规格书下载地址
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