NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 47 kW

DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplif

NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 47 k廓

NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k

Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified

Transistor

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ

NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 47 k廓

General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA143ZMB. Features and benefits ■ 100 mA output current capability ■ Reduces component count ■ Built-in bias resistors ■ Reduces pick

封装/外壳：SC-101，SOT-883 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 50V DFN1006-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

封装/外壳：3-XFDFN 包装：卷带（TR） 描述：TRANS PREBIAS NPN 50V DFN1006B-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

NPN resistor-equipped transistor; R1 = 4.7 k廓, R2 = 47 k廓

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文件：376.28 Kbytes Page：2 Pages