型号 功能描述 生产厂家 企业 LOGO 操作

512 Kbit (64K x 8-bit) 5V Flash Memory

GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5

EON

宜扬科技

512 Kbit 64Kb x8, Bulk Single Supply Flash Memory

SUMMARY DESCRIPTION The M29F512B is a 512 Kbit (64Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. ■ SINGLE 5V

STMICROELECTRONICS

意法半导体

512 Kbit 64Kb x8, Bulk Single Supply Flash Memory

SUMMARY DESCRIPTION The M29F512B is a 512 Kbit (64Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. ■ SINGLE 5V

STMICROELECTRONICS

意法半导体

更新时间:2025-12-16 18:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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DIP
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6895
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2650
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6000
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