型号 功能描述 生产厂家 企业 LOGO 操作
PD85035TR-E

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excell

STMICROELECTRONICS

意法半导体

PD85035TR-E

封装/外壳:PowerSO-10RF 裸露底部焊盘(2 条成形引线) 包装:托盘 描述:TRANS RF N-CH FET POWERSO-10RF 分立半导体产品 晶体管 - FET,MOSFET - 射频

STMICROELECTRONICS

意法半导体

PD85035TR-E

射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans

STMICROELECTRONICS

意法半导体

PD85035TR-E

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

文件:384.36 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

RF power transistor - LdmoST family

Description The PD85035C is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035C boasts the excellen

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excell

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

文件:384.36 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

文件:384.36 Kbytes Page:15 Pages

STMICROELECTRONICS

意法半导体

LTCC High Temperature Inductors 0.30x0.30 inch Size

文件:308.95 Kbytes Page:1 Pages

ETC2List of Unclassifed Manufacturers

ETC未分类制造商

PD85035TR-E产品属性

  • 类型

    描述

  • 型号

    PD85035TR-E

  • 功能描述

    射频MOSFET电源晶体管 POWER R.F. N-Ch Trans

  • RoHS

  • 制造商

    Freescale Semiconductor

  • 配置

    Single

  • 频率

    1800 MHz to 2000 MHz

  • 增益

    27 dB

  • 输出功率

    100 W

  • 封装/箱体

    NI-780-4

  • 封装

    Tray

更新时间:2025-10-15 19:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GTS
24+
DIP-20
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
ST/意法
2517+
8850
只做原装正品现货或订货假一赔十!
STMicroelectronics
23+
50000
只做原装正品
N/A
24+
DIP20
5989
公司原厂原装现货假一罚十!特价出售!强势库存!
ST
23+
原厂原封
16900
正规渠道,只有原装!
PULSE
23+
SOP
95500
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST/意法半导体
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
ST
22+
PowerSO10RF (Straight Lead)
9000
原厂渠道,现货配单
ST/意法半导体
25+
原厂封装
9999
PIONEER
24+
TSSOP-48
173

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