LTCC High Temperature Inductors 0.30x0.30 inch Size

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包装：散装 描述：B302-7X10-WK-O-NOT-SAFETY GLASSE 标签，标志，护栏，标识 标签，贴纸，贴标 - 预印

包装：散装 描述：B302-7X10-WK-O-NOT-SAFETY GLASSE 标签，标志，护栏，标识 标签，贴纸，贴标 - 预印

压线端子

RF power transistor - LdmoST family

Description The PD85035C is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035C boasts the excellen

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excell

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

Description The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excell

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

文件：384.36 Kbytes Page：15 Pages

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

文件：384.36 Kbytes Page：15 Pages