HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF power transistor the LdmoST plastic family

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

RF power transistor The LdmoST plastic family

Description The PD84002 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD84002’s superior gain and ef

RF Power LDMOS transistor

• In compliance with the 2002/95/EC european directive\n• Supplied in tape and reel\n• Excellent thermal stability\n• Broadband performances POUT = 2 W with 13 dB gain @ 870 MHz• Common source configuration\n• ESD protection\n• Plastic package;

RF Power LDMOS transistor

The PD84006-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz boasts the excellent gain, linearity and relia Excellent thermal stability\nCommon source configuration\nBroadband performances: POUT = 6 W with 13 dB gain @ 870 MHz\nPlastic package\nESD protection\nIn compliance with the 2002/95/EC European directive;

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF power transistor, LDmoST plastic family

Description The PD84006L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies up to 1 GHz. PD84006L-E’s superior gain and

RF Power LDMOS transistor

The PD84006L-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies up to 1 GHz.\n PD84006L-E’s superior gain and efficien • Excellent thermal stability\n• Common source configuration\n• Broadband performances:POUT = 6 W with 13 dB gain @ 870 MHz\n• Plastic package• ESD protection\n• Supplied in tape and reel\n• In compliance with the 2002/95/EC european directive;

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. boasts the excellent gain, linearity a

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excell

RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD84010-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5V in common source mode at frequencies of up to 1 GHz. PD84010-E boasts the excellen

封装/外壳：TO-243AA 包装：卷带（TR） 描述：FET RF 25V 870MHZ 分立半导体产品 晶体管 - FET，MOSFET - 射频

Excellent thermal stability

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封装/外壳：PowerSO-10 裸露底部焊盘 包装：托盘 描述：FET RF 25V 870MHZ PWRSO-10RF 分立半导体产品 晶体管 - FET，MOSFET - 射频