HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excelle

RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs DESCRIPTION The PD54003L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequenc

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF Power Transistors The LdmoST Plastic FAMILY

Description The PD54003L-E is a common source N-Channel, enhancement-mode lateral Field Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54003L-E boasts the exce

RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excelle

RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excelle

RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excelle

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD54008 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. PD54008 boasts the excellent gai

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

RF power transistors The LdmoST Plastic family

Description The PD54008L-E is a common source N-Channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54008L-E boasts the excelle

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD54008 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. PD54008 boasts the excellent gai

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD54008 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. PD54008 boasts the excellent gai

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：1.53332 Mbytes Page：27 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：1.53332 Mbytes Page：27 Pages

RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY

RF Power LDMOS transistor

封装/外壳：8-PowerVDFN 包装：托盘 描述：TRANSISTOR RF 5X5 POWERFLAT 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：115.69 Kbytes Page：10 Pages

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：115.69 Kbytes Page：10 Pages

封装/外壳：PowerSO-10 裸露底部焊盘 包装：托盘 描述：TRANS RF N-CH FET POWERSO-10RF 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：1.53332 Mbytes Page：27 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：1.53332 Mbytes Page：27 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：1.53332 Mbytes Page：27 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes Page：29 Pages

RF功率LDMOS晶体管

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes Page：29 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes Page：29 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes Page：29 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes Page：29 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes Page：29 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes Page：29 Pages

Pentium 4 Processors Supporting Hyper-Threading Technology

Introduction The Intel® Pentium® 4 processor on 90 nm process in the 775-land package is a follow on to the Pentium 4 processor in the 478-pin package with enhancements to the Intel NetBurst® microarchitecture. The Pentium 4 processor on 90 nm process in the 775-land package uses FlipChip Land Gr

PISTON SEALS

DESCRIPTION The BECA 540 profile is a single acting piston seal composed of a profiled, filled PTFE U-ring type seal and a V-spring that is resistant to corrosion. The BECA 549 profile is specially designed for applications where the seal is in contact with food products. It is characteri

Security & Sound, #20-20c, BC, CMR

Product Description Security & Sound Cable, Riser-CMR, 20-20 AWG stranded bare copper conductors with PVC insulation, PVC jacket with ripcord

Ethernet Modbus TCP to 32 Open-Collector Outputs

Features • 10/100BaseT Ethernet Modbus TCP interface • 32 open collector outputs • Removable screw terminals simplify field wiring • Status indicator LEDs for Communication, Fault, and Power • Input power via terminal block or modular connector • Optional DIN rail or table mount • Sealevel

5MM LED

文件：116 Kbytes Page：5 Pages