HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excelle

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs DESCRIPTION The PD54003L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequenc

RF Power Transistors The LdmoST Plastic FAMILY

Description The PD54003L-E is a common source N-Channel, enhancement-mode lateral Field Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54003L-E boasts the exce

RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excelle

RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excelle

RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excelle

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD54008 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. PD54008 boasts the excellent gai

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

RF power transistors The LdmoST Plastic family

Description The PD54008L-E is a common source N-Channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54008L-E boasts the excelle

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD54008 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. PD54008 boasts the excellent gai

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

DESCRIPTION The PD54008 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. PD54008 boasts the excellent gai

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode, lateral MOSFETs

Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：115.69 Kbytes Page：10 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：1.53332 Mbytes Page：27 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：1.53332 Mbytes Page：27 Pages

RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY

RF Power LDMOS transistor

封装/外壳：8-PowerVDFN 包装：托盘 描述：TRANSISTOR RF 5X5 POWERFLAT 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：115.69 Kbytes Page：10 Pages

RF POWER TRANSISTORS The LdmoST Plastic FAMILY

文件：115.69 Kbytes Page：10 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：1.53332 Mbytes Page：27 Pages

封装/外壳：PowerSO-10 裸露底部焊盘 包装：托盘 描述：TRANS RF N-CH FET POWERSO-10RF 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：1.53332 Mbytes Page：27 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：1.53332 Mbytes Page：27 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes Page：29 Pages

RF功率LDMOS晶体管

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes Page：29 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes Page：29 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes Page：29 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes Page：29 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes Page：29 Pages

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：822.57 Kbytes Page：29 Pages

丝印代码：-MG；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

NPN 9 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition frequency

Octal buffer/line driver; 3-state; inverting

GENERAL DESCRIPTION The 74HC/HCT540 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. FEATURES • Inverting outputs • Output capability: bus driver • ICC category: MSI

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca