丝印代码：PD517；PCA9517 Level-Translating I2C Bus Repeater

1 Features 1• Two-Channel Bidirectional Buffer • I2C Bus and SMBus Compatible • Operating Supply Voltage Range of 0.9 V to 5.5 V on A Side • Operating Supply Voltage Range of 2.7 V to 5.5 V on B Side • Voltage-Level Translation From 0.9 V to 5.5 V and 2.7 V to 5.5 V • Footprint and Functi

丝印代码：PD517；PCA9517 Level-Translating I2C Bus Repeater

1 Features 1• Two-Channel Bidirectional Buffer • I2C Bus and SMBus Compatible • Operating Supply Voltage Range of 0.9 V to 5.5 V on A Side • Operating Supply Voltage Range of 2.7 V to 5.5 V on B Side • Voltage-Level Translation From 0.9 V to 5.5 V and 2.7 V to 5.5 V • Footprint and Functi

P-Channel Enhancement Mode Field Effect Transistor

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P-Channel Enhancement Mode MOSFET

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MOSFETs

Power MOSFET

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BC516. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required.

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator ■ AnyESR REGULATOR ■ VERY COMMON OUTPUT DECOUPLING CERAMIC CAPACITOR ■ LOW CONSUMPTION : 250µA FULL LOAD ■ VERY LOW NOISE : 30µV ■ VERY LOW DROPOUT VOLTAGE : 50mV ■ HIGH PSRR : 60dB ■ STANDBY AND POWER DOWN

Silicon High Voltage Plastic Rectifier for Industrial and Microwave Oven

Features: ● Controlled Avalanche Characteristic Combined with the Ability to Dissipate Reverse Power ● Low Forward Voltage Drop ● Typical IR less than 0.1µA ● High Overload Surge Capacity

N-CHANNEL POWER MOS TRANSISTORS

HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.