PD410811,Thyristor & Diode Modules,1100 Amperes, 800 Volts,POW-R-BLOK™ / Pow-R-BRIK™,Main Applications for POW-R-BLOKs - battery chargers, induction heating/melting, medical equipment, motor controls, power supplies, UPS, weldingMain Applicati

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High Speed Photodiode

■ Features 1. Peak sensitivity wavelength matching with infrared LED( λ p= 1 000nm ) 2. Built-in visible light cut-off filter ■ Applications 1. Infrared remote controllers for TVs, VCRs, audio equipment and air condi tioners, etc.

封装/外壳：POW-R-BLOK™ 模块 包装：散装 描述：DIODE MODULE 800V 1100A POWRBLOK 分立半导体产品 二极管 - 整流器 - 阵列

High Speed Photodiode

封装/外壳：径向，侧视图 包装：盒 描述：SENSOR PHOTODIODE 1000NM RADIAL 传感器，变送器 光学传感器 - 光电二极管

High Speed Photodiode

High Speed Photodiode

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N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

POWER RECTIFIERS(4.0A,500-1000V)

Fast Settling, Video Op Amp with Disable

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