UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices

DESCRIPTION The UTC PCR406silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.

SCRs

Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circu

Silicon Planar PNPN Thyristors

文件：43.49 Kbytes Page：1 Pages

Thyristor in a TO-92 Plastic Package

文件：705.88 Kbytes Page：6 Pages

SCR

SCRS

文件：131.92 Kbytes Page：3 Pages

UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices

DESCRIPTION The UTC PCR406silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.

UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices

DESCRIPTION The UTC PCR406silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications.

SCRS

文件：131.92 Kbytes Page：3 Pages

SCRS

文件：131.92 Kbytes Page：3 Pages

SCRS

文件：131.92 Kbytes Page：3 Pages

SCRS

文件：131.92 Kbytes Page：3 Pages

SCRS

文件：131.92 Kbytes Page：3 Pages

SCRS

文件：131.92 Kbytes Page：3 Pages

SCRS

文件：131.92 Kbytes Page：3 Pages

SCRS

文件：131.92 Kbytes Page：3 Pages

SCRS

文件：131.92 Kbytes Page：3 Pages

SCRS

文件：131.92 Kbytes Page：3 Pages

SCRS

文件：131.92 Kbytes Page：3 Pages

SCRS

文件：131.92 Kbytes Page：3 Pages

SCRS

文件：131.92 Kbytes Page：3 Pages

POWER TRANSISTORS(7A,150-200V,60W)

7 AMPERE POWER TRANSISTOR 150 - 200 VOLTS 60 WATTS

7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS

These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tf = 750 ns (max) • Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A • Packaged in Compact JEDEC TO–220AB

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

Wideband, Low Power Monolithic Op Amp

文件：432.11 Kbytes Page：6 Pages

Wideband, Low Power Monolithic Op Amp

文件：432.11 Kbytes Page：6 Pages