Silicon N Channel IGBT High Speed Power Switching

Features • Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C) • Built in fast recovery diode in one package • Trench gate and thin wafer technology • High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω

Silicon N Channel IGBT High Speed Power Switching

Features • High speed switching • Low on-state voltage • Fast recovery diode

600V - 40A - IGBT High Speed Power Switching

Features  Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)

600 V - 40 A - IGBT High Speed Power Switching

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Silicon N Channel IGBT High Speed Power Switching

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