MLC 512M X16 LBGA

封装/外壳：64-LBGA 包装：卷带（TR） 描述：IC FLASH 512MBIT PARALLEL 64FBGA 集成电路（IC） 存储器

封装/外壳：64-LBGA 包装：托盘 描述：IC FLASH 512MBIT PARALLEL 64FBGA 集成电路（IC） 存储器

MLC 512M X16 LBGA

Parallel NOR Flash Embedded Memory

文件：855.4 Kbytes Page：75 Pages

Parallel NOR Flash Embedded Memory

文件：855.4 Kbytes Page：75 Pages

Parallel NOR Flash Embedded Memory

文件：855.4 Kbytes Page：75 Pages

Parallel NOR Flash Embedded Memory

文件：855.4 Kbytes Page：75 Pages

MLC 512M X16 LBGA

512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F512 is a 512 K bit Flash memory organized as 64 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F512 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be

512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

GENERAL DESCRIPTION The Am28F512A is a 512 Kbit Flash memory organized as 64 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. The Am28F512A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to b

512K (64K x 8) CMOS FLASH MEMORY

512K (64K x 8) CMOS FLASH MEMORY

512K-Bit CMOS Flash Memory

DESCRIPTION The CAT28F512 is a high speed 64K x 8-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second. It is pin and Read t

512K(64Kx8)CMOS FLASH MEMORY

文件：1.81909 Mbytes Page：30 Pages