PC28F256价格

参考价格:¥50.0414

型号:PC28F256G18AE 品牌:MICRON 备注:这里有PC28F256多少钱,2024年最近7天走势,今日出价,今日竞价,PC28F256批发/采购报价,PC28F256行情走势销售排行榜,PC28F256报价。
型号 功能描述 生产厂家&企业 LOGO 操作

IntelStrataFlashEmbeddedMemory

Introduction ThisdocumentprovidesinformationabouttheIntelStrataFlash®EmbeddedMemory(P30)deviceanddescribesitsfeatures,operation,andspecifications. ProductFeatures ■Highperformance —85/88nsinitialaccess —40MHzwithzerowaitstates,20nsclock-todataoutput

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

IntelStrataFlashEmbeddedMemory

Introduction ThisdocumentprovidesinformationabouttheIntelStrataFlash®EmbeddedMemory(P30)deviceanddescribesitsfeatures,operation,andspecifications. ProductFeatures ■Highperformance —85/88nsinitialaccess —40MHzwithzerowaitstates,20nsclock-todataoutput

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

128Mb,256Mb,512Mb,1GbStrataFlashMemory

文件:1.15488 Mbytes Page:118 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

128Mb,256Mb,512Mb,1GbStrataFlashMemory

文件:1.15488 Mbytes Page:118 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

封装/外壳:64-TBGA 包装:卷带(TR) 描述:IC FLASH 256MBIT PAR 64EASYBGA 集成电路(IC) 存储器

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

封装/外壳:64-TBGA 包装:托盘 描述:IC FLASH 256MBIT PAR 64EASYBGA 集成电路(IC) 存储器

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

128Mb,256Mb,512Mb,1GbStrataFlashMemory

文件:1.15488 Mbytes Page:118 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

128Mb,256Mb,512Mb,1GbStrataFlashMemory

文件:1.15488 Mbytes Page:118 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

IntelStrataFlashMemory(J3)

文件:905.78 Kbytes Page:72 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

IntelStrataFlashMemory(J3)

文件:905.78 Kbytes Page:72 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

IntelStrataFlashMemory(J3)

文件:905.78 Kbytes Page:72 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

IntelStrataFlashMemory(J3)

文件:905.78 Kbytes Page:72 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

IntelStrataFlashMemory(J3)

文件:905.78 Kbytes Page:72 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

IntelStrataFlashMemory(J3)

文件:905.78 Kbytes Page:72 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

IntelStrataFlashMemory(J3)

文件:905.78 Kbytes Page:72 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

IntelStrataFlashMemory(J3)

文件:905.78 Kbytes Page:72 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

IntelStrataFlash짰Memory

文件:990.7 Kbytes Page:72 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

IntelStrataFlashMemory(J3)

文件:905.78 Kbytes Page:72 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

IntelStrataFlashMemory(J3)

文件:905.78 Kbytes Page:72 Pages

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

Intel

ParallelNORFlashEmbeddedMemory

文件:855.4 Kbytes Page:75 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

ParallelNORFlashEmbeddedMemory

文件:855.4 Kbytes Page:75 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

ParallelNORFlashEmbeddedMemory

文件:855.4 Kbytes Page:75 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

ParallelNORFlashEmbeddedMemory

文件:855.4 Kbytes Page:75 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

MicronParallelNORFlashEmbeddedMemory(P30-65nm)

文件:1.36605 Mbytes Page:98 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

NumonyxStrataFlashEmbeddedMemory

文件:1.39934 Mbytes Page:99 Pages

NUMONYXNUMONYX

恒忆

NUMONYX

MicronParallelNORFlashEmbeddedMemory(P30-65nm)

文件:1.36605 Mbytes Page:98 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

256Mband512Mb(256Mb/256Mb),P30-65nm

文件:1.35186 Mbytes Page:95 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

MicronParallelNORFlashEmbeddedMemory(P30-65nm)

文件:1.36605 Mbytes Page:98 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

256Mband512Mb(256Mb/256Mb),P30-65nm

文件:1.35186 Mbytes Page:95 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

MicronParallelNORFlashEmbeddedMemory(P30-65nm)

文件:1.36605 Mbytes Page:98 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

NumonyxStrataFlashEmbeddedMemory

文件:1.39934 Mbytes Page:99 Pages

NUMONYXNUMONYX

恒忆

NUMONYX

MicronParallelNORFlashEmbeddedMemory(P30-65nm)

文件:1.35244 Mbytes Page:95 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

MicronParallelNORFlashEmbeddedMemory(P30-65nm)

文件:1.36605 Mbytes Page:98 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

256Mband512Mb(256Mb/256Mb),P30-65nm

文件:1.35186 Mbytes Page:95 Pages

MicronMicron Technology Inc.

镁光美国镁光科技有限公司

Micron

256Kilobit(32Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemorywithEmbeddedAlgorithms

GENERALDESCRIPTION TheAm28F256Aisa256KFlashmemoryorganizedas32Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F256Aispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedtober

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AMD

512Kbit(64Kbx8BulkErase)FlasxhMemory

DESCRIPTION TheM28F512FLASHMemoryisanon-volatilememorywhichmaybeerasedelectricallyatthechiplevelandprogrammedbyte-by-byte.Itisorganisedas64Kbytesof8bits.Itusesacommandregisterarchitecturetoselecttheoperatingmodesandthusprovidesasimplemicroprocessorint

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

256K(32Kx8,ChipErase)FLASHMEMORY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

256Kilobit(32Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemory

GENERALDESCRIPTION TheAm28F256isa256KFlashmemoryorganizedas32Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenonvolatilerandomaccessmemory.TheAm28F256ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedtoberepr

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AMD

256Kilobit(32Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemory

GENERALDESCRIPTION TheAm28F256isa256KFlashmemoryorganizedas32Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenonvolatilerandomaccessmemory.TheAm28F256ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedtoberepr

AMDAdvanced Micro Devices, Inc.

超威半导体美国超威半导体公司

AMD

PC28F256产品属性

  • 类型

    描述

  • 型号

    PC28F256

  • 制造商

    Micron Technology Inc

  • 功能描述

    NOR Flash Parallel/Serial 1.8V 256Mbit 16M x 16bit 96ns 64-Pin BGA Tray

  • 制造商

    Micron Technology Inc

  • 功能描述

    PARALLEL NOR - Trays

  • 制造商

    Micron Technology Inc

  • 功能描述

    FLASH PARALLEL 256MBIT 64EB

  • 制造商

    Micron Technology Inc

  • 功能描述

    FLASH, PARALLEL, 256MBIT, 64EBGA

  • 制造商

    Micron Technology Inc

  • 功能描述

    FLASH, PARALLEL, 256MBIT, 64EBGA; Memory

  • Type

    Flash - NOR; Memory

  • Size

    256Mbit; Memory

  • Configuration

    32M x 8bit; Supply Voltage

  • Min

    1.7V; Supply Voltage

  • Max

    2V; Memory Case

  • Style

    BGA; No. of

  • Pins

    64; Clock

  • Frequency

    133MHz; Access ;RoHS

  • Compliant

    Yes

更新时间:2024-6-21 19:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTEL
存储器
BGA
41402
INTEL原装存储芯片-诚信为本
INTEL
23+
BGA
20000
原厂原装正品现货
INTEL
23+
BGA
7750
全新原装优势
MICRON
18+
BGA
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MICRON
09+13+
BGA
15330
只做原厂原装,认准宝芯创配单专家
INTEL
2016+
BGA
4000
只做原装,假一罚十,公司可开17%增值税发票!
INTEL/英特尔
2022
BGA
80000
原装现货,OEM渠道,欢迎咨询
INTEL/英特尔
22+
BGA
354000
micron(镁光)
EASYBGA-64(10x13)
144
INTEL
17+
BGA
9888
全新进口原装,现货库存

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