40 V, 5 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a medium power SOT89 (SC-62) package. NPN complement: PBSS4540X. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High efficiency leading to less heat generation. APPLICATIONS • Supply line

40 V, 5 A PNP low VCEsat (BISS) transistor

40 V, 5 A PNP low VCEsat (BISS) transistor

1. General description PNP low VCEsat transistor in a medium power SOT89 (SC-62) package. NPN complement: PBSS4540X. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High efficiency leading to less heat generation.

40 V low VCEsat PNP transistor

1. General description PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation. 3. Applications • Supply l

40 V low VCEsat PNP transistor

PNP medium power transistor

DESCRIPTION PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z. FEATURES • High current (max. 10 A) • Low voltage (max. 40 V) • Low VCEsat. APPLICATIONS • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp

40 V low VCEsat PNP transistor

1. General description PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z-Q 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Qualified according to AEC

Low VCEsat (BISS) transistors

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功率三极管

PNP low VCEsat (BISS) transistor 40 V, 5 A

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40 V, 5 A PNP low VCEsat transistor

40 V low VCEsat PNP transistor

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 5A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：散装 描述：TRANS PNP 40V 5A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

40 V low VCEsat PNP transistor

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PNP Transistors

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS=550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS=550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

Brown Micro Potentiometer Knob 4 pack

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ABLEITSTROM-MESSGER횆TE

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