丝印代码：PB5540；40 V low VCEsat PNP transistor

1. General description PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z-Q 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Qualified according to AEC

40 V low VCEsat PNP transistor

PNP low VCEsat transistor in a SOT223 plastic package.\n NPN complement: PBSS4540Z-Q • Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

PNP medium power transistor

DESCRIPTION PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z. FEATURES • High current (max. 10 A) • Low voltage (max. 40 V) • Low VCEsat. APPLICATIONS • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp

Silicon Controlled Rectifier (SCR) 55 Amps

Features: • High Voltage Capability • High Surge Capability • Glass Passivated Chip

8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER

文件：231.63 Kbytes Page：18 Pages

8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER

文件：231.63 Kbytes Page：18 Pages

8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER

文件：231.63 Kbytes Page：18 Pages