12 V, 6 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5612PA. Features and benefits ■ Low collector-emitter saturatio

PBSS4612PA - 12 V, 6 A NPN low V_CEsat (BISS) transistor

封装/外壳：3-PowerUDFN 包装：散装 描述：TRANS NPN 12V 6A 3HUSON 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

12 V, 6 A NPN low VCEsat (BISS) transistor

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High Q, high self-resonant frequency

Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise

N and P-Channel Enhancement Mode Power MOSFET

Description The 4612 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 60V,ID =4.5A RDS(ON)

Air solenoid valve

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Heyco®-Tite Brass Liquid Tight Cordgrips

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Heyco®-Tite Brass Liquid Tight Cordgrips

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