General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

PNP complement: PBSS5612PA.

Features and benefits

■ Low collector-emitter saturation voltage VCEsat

■ High collector current capability IC and ICM

■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

■ Exposed heat sink for excellent thermal and electrical conductivity

■ Leadless small SMD plastic package with medium power capability

Applications

■ Loadswitch

■ Battery-driven devices

■ Power management

■ Charging circuits

■ Power switches (e.g. motors, fans)