NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.8V(max)@Ic/Ib= 2A / 200mA  High collector current capability  Excellent DC current gain characteristics  Lead free in comply with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

低电压双极晶体管

NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.8V(max)@Ic/Ib= 2A / 200mA  High collector current capability  Excellent DC current gain characteristics  Lead free in comply with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 32V 2A TO252 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER DIVDERS - TWO WAY, 1TO 18 GHZ

FEATURES • Designed to Meet MIL-E-5400 Class 3 • SMA Female Connectors per MIL-PRF-39012 • High Isolation Wilkinson Circuit Design

POWER DIVIDERS

FEATURES • Designed to Meet MIL-E-5400 Class 3 • SMA Female Connectors per MIL-PRF-39012 • High Isolation Wilkinson Circuit Design

POWER DIVIDERS

FEATURES • Designed to Meet MIL-E-5400 Class 3 • SMA Female Connectors per MIL-PRF-39012 • High Isolation Wilkinson Circuit Design

POWER DIVIDERS

FEATURES • Designed to Meet MIL-E-5400 Class 3 • SMA Female Connectors per MIL-PRF-39012 • High Isolation Wilkinson Circuit Design

SPST CATV UltraCMOS??Switch

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