30 V, 2.6 A NPN low VCEsat (BISS) transistor

30 V, 2.6 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Printed-Circuit Bo

30 V, 2.6 A NPN low VCEsat (BISS) transistor

30 V, 2.6 A NPN low VCEsat (BISS) transistor

30 V, 2.6 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PT-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • Optimized switching time • High collector current capability IC and ICM

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 2.6A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

30 V, 2.6 A NPN low VCEsat transistor

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