30 V, 2.6 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PT-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • Optimized switching time • High collector current capability IC and ICM

30 V, 2.6 A NPN low VCEsat transistor

CONNECTORIZED PHASE SHIFTERS

DESCRIPTION Digital phase shifters optimized for low loss and/or high power. Each one features a unique capability which allows it to be used in either the transmit or receive path. Hermetic, military/industrial design. ADDITIONAL FEATURES (#4031) ■ Low loss: 1.7 dB ■ RF power: 50 dBm CONNECT

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low-loss, compact, and economical surface-acoustic-wave (SAW)

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