40 V, 0.5 A PNP low VCEsat (BISS) transistor

40 V, 0.5 A PNP low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency leading to reduced heat generation •Reduced printed-circuit board requirements. APPLICATIONS •Power management: –DC-DC converter –Supply line switching –Battery charg

40 V, 0.5 A PNP low VCEsat (BISS) transistor

40 V, 0.5 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2540MB. Features and benefits ■ Leadless ultra small SMD plastic package ■ Low package height of 0.37 mm ■

封装/外壳：SC-101，SOT-883 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 0.5A SOT883 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

40 V, 0.5 A PNP low VCEsat (BISS) transistor

封装/外壳：3-XFDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 0.5A DFN1006B-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Low Thermal EMF Reed Relays

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Construction 1) Component 1 10 X 1 COND a) Conductor 24 (19/36) AWG TC 0.025 b) Insulation 0.010 Wall, Nom. PVC 0.045 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 5 GREEN 9 WHITE 2 RED 6 BLUE 10 BLACK 3 ORANGE 7 VILOET 4 YELLOW 8 SLATE 2) Cable Assembly 10 Components assemble

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m廓 HiTESTER

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