40 V, 0.5 A PNP low VCEsat (BISS) transistor

丝印代码：DA；40 V, 0.5 A PNP low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency leading to reduced heat generation •Reduced printed-circuit board requirements. APPLICATIONS •Power management: –DC-DC converter –Supply line switching –Battery charg

40 V, 0.5 A PNP low VCEsat (BISS) transistor

Low VCEsat PNP transistor in a SOT883 leadless ultra small plastic package. NPN complement: PBSS2540M. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High efficiency leading to reduced heat generation\n• Reduced printed-circuit board requirements.\n• AEC-Q101 qualified;

丝印代码：PBSS3540MB；40 V, 0.5 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2540MB. Features and benefits ■ Leadless ultra small SMD plastic package ■ Low package height of 0.37 mm ■

40 V, 0.5 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2540MB. • Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High efficiency due to less heat generation\n• AEC-Q101 qualified\n• Reduced Printed-Circuit Board (PCB) requirements;

封装/外壳：SC-101，SOT-883 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 0.5A SOT883 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：3-XFDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 0.5A DFN1006B-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

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4/5 Bit Multiplexed, 1 Bit Latched Port with Standard 2-Wire Bus Interface and Non-Volatile Latches

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