40 V, 0.5 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2540MB. Features and benefits ■ Leadless ultra small SMD plastic package ■ Low package height of 0.37 mm ■

40 V, 0.5 A PNP low VCEsat (BISS) transistor

封装/外壳：3-XFDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 0.5A DFN1006B-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Customer Specification

Construction 1) Component 1 10 X 1 COND a) Conductor 24 (19/36) AWG TC 0.025 b) Insulation 0.010 Wall, Nom. PVC 0.045 (1) Color(s) Cond Color Cond Color Cond Color 1 BROWN 5 GREEN 9 WHITE 2 RED 6 BLUE 10 BLACK 3 ORANGE 7 VILOET 4 YELLOW 8 SLATE 2) Cable Assembly 10 Components assemble

Ceramic Stand-off Insulators for RF-Equipment

Ceramic Stand-off Insulators for RF-Equipment MATERIAL:    Stand - off insulator elements made from Class 1 Ceramic    material (C 221-IEC 60672-3), body completely glazed.    Connection terminals: brass OPERATING CONDITIONS:    Maximum operating temperature + 100 °C    Maximum compressive

Low Thermal EMF Reed Relays

LOW THERMAL EMF REED RELAYS The 3500 Series is ideally suited to the needs of Instrumentation, Data Acquisition and Process Control. The specification tables allow you to select the appropriate relay for your particular application. Recommended for use in high accuracy DVM’s, Multiplexers and Dig

Precision Potentiometer

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m廓 HiTESTER

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