晶体管

丝印代码：AF；80 V, 3 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

60 V, 4.7 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS304PX. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• AEC-Q101 qualifie;

NPN General Purpose Transistor

Features » Consumer electronics « Voltage switching « High Speed Switching

丝印代码：5E；60 V, 4.7 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

NPN General Purpose Transistor

Features Consumer electronics o Voltage switching « High Speed Switching

丝印代码：S304NZ；60 V, 5.2 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

60 V, 5.2 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PZ. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ Hig

丝印代码：S304NZ；60 V, 5.2 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

丝印代码：AJ；80 V, 3 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

丝印代码：5L；60 V, 4.2 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

丝印代码：S304PZ；60 V, 4.5 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

丝印代码：S304PZ；60 V, 4.5 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS304NZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

60 V, 4.7 A NPN low VCEsat (BISS) transistor

60 V, 4.7 A NPN low VCEsat (BISS) transistor

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 4.7A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PBSS304NX/SOT89/MPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

80 V, 3 A PNP low VCEsat (BISS) transistor

60 V, 4.2 A PNP low VCEsat (BISS) transistor

60 V, 4.5 A PNP low VCEsat (BISS) transistor

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 3.0 Amperes)

VOLTAGE 200 to 600 Volts CURRENT 3.0 Amperes FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage. • High surge capability. • Plastic package ha

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 3.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 3.0 Amperes)

VOLTAGE 50 to 1000 Volt CURRENT 3 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Glass passivated junction • Fast switching for high efficiency. • Lead free in compliance with EU RoHS

Negative Regulator

文件：161.59 Kbytes Page：6 Pages

Negative Regulator

文件：161.59 Kbytes Page：6 Pages