8.0A BRIDGE RECTIFIER

Features • High Current Capability • Surge Overload Rating to 125A Peak • High Case Dielectric Strength of 1500V • Ideal for Printed Circuit Board Application • UL Listed Under Recognized Component Index, File Number E94661

8.0A BRIDGE RECTIFIER

Features • Diffused Junction • High Current Capability • Surge Overload Rating to 125A Peak • High Case Dielectric Strength of 1500V • Ideal for Printed Circuit BoardApplication • Plastic Material - UL Flammability Classification 94V-0

封装/外壳：4-方形，PBPC-8 包装：管件 描述：BRIDGE RECT 1PHASE 50V 6A PBPC-8 分立半导体产品 二极管 - 桥式整流器

Diode Rectifier Bridge Single 50V 8A 4-Pin Case PBPC-8 Box

8.0A BRIDGE RECTIFIER

文件：341.58 Kbytes Page：3 Pages

8.0A BRIDGE RECTIFIER

文件：341.58 Kbytes Page：3 Pages

Plastic High Power Silicon NPN Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

Integrated Circuit FM Stereo Demodulator

Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead