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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1/2.7” 2.2MP NIR Enhanced Global Shutter Image Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 |  |   | |
1/2.7” 2.2MP NIR Enhanced Global Shutter Image Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
1/2.7” 2.2MP NIR Enhanced Global Shutter Image Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
1/2.7” 2.2MP NIR Enhanced Global Shutter Image Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
1/2.7” 2.2MP NIR Enhanced Global Shutter Image Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
1/2.7” 2.2MP NIR Enhanced Global Shutter Image Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
1/2.7” 2.2MP NIR Enhanced Global Shutter Image Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
1/2.7” 2.2MP NIR Enhanced Global Shutter Image Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
1/2.7” 2.2MP NIR Enhanced Global Shutter Image Features ●1/2.7” ●1600x1400 ●8/10/12-bit ●2.79μm 90fpsglobalshutterwithCDS Highsensitivity Smalldiesizeachievedviastate-of-the-artstacked BSItechnology ClassleadingQEat940nmcombinedwithhigh sensitivity.IndustryleadingPLSat940nm DigitalCDSandrownoisec | OSRAMOSRAM GmbH 艾迈斯欧司朗欧司朗光电半导体 | | | |
Packaged PIN Diodes 文件：389.27 Kbytes Page：7 Pages | MA-COM M/A-COM Technology Solutions, Inc. |  | | |
Packaged PIN Diodes 文件：389.27 Kbytes Page：7 Pages | MA-COM M/A-COM Technology Solutions, Inc. | | | |
Packaged PIN Diodes 文件：389.27 Kbytes Page：7 Pages | MA-COM M/A-COM Technology Solutions, Inc. | | |
PACKAGE产品属性
- 类型
描述
- 型号
PACKAGE
- 功能描述
Package diagrams and shipping information
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
16+ |
8000 |
只做原装现货 |
|||
INFINEON |
23+ |
16+ |
7000 |
||||
INFINEON |
22+ |
16+ |
8000 |
终端可免费供样,支持BOM配单 |
|||
美微科/MCC |
24+ |
con |
3000 |
优势库存,原装正品 |
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PACKAGE规格书下载地址
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PAM2803，全新原装当天发货或门市自取0755-82732291.
2019-11-1
DdatasheetPDF页码索引
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