isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 125mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

600V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 125mΩ  Fast recovery Qrr/Trr performance  High Speed Switching and Low RDS(ON)  100 Avalanche Tested  100 Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

Telecom / Sever Power Supplies

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isc N-Channel MOSFET Transistor

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Telecom / Sever Power Supplies

文件：1.54589 Mbytes Page：9 Pages