| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
POWER MOSFET Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi | IRF |   | ||
P-CHANNEL POWER MOSFETs FEATURES • Lower RDS(ON) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high tmeperature reliability | Samsung 三星 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：277.52 Kbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
isc N-Channel MOSFET Transistor 文件：280.77 Kbytes Page：2 Pages | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
55608 |
保证进口原装现货假一赔十 |
|||
INFINEON |
100000 |
代理渠道/只做原装/可含税 |
|||||
IR |
24+ |
TO 220 |
160878 |
明嘉莱只做原装正品现货 |
|||
IR |
25+ |
TO-220 |
22000 |
原装现货假一罚十 |
|||
IR(国际整流器) |
24+ |
N/A |
73048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
IR |
24+ |
TO-220 |
18355 |
原装现货假一赔十 |
|||
INFINEON |
23+ |
TO-220 |
30000 |
正规渠道,只有原装! |
|||
VISHAY(威世) |
24+ |
TO-263-3 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON |
24+ |
TO-220 |
28000 |
原装现正品可看现货 |
|||
INFINEON |
24+ |
Tube |
75000 |
郑重承诺只做原装进口现货 |
P9Z24N规格书下载地址
P9Z24N参数引脚图相关
- Q100
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DdatasheetPDF页码索引
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